…教师师资介绍简介-尚景智 – 西北工业大学师资导 – Free考研…(教师名录)
相册 根柢信息 the basic information 尚景智 柔性电子研讨院 博士研讨生结业 哲学博士 教授 iamjzshang@nwpu.edu.cn 作业阅历 work experience 2021-至今:西北工业大学，柔性电子研讨院，教授2014–2021:南洋理工大学，物理与使用物理系，博士后2013–2014:南洋理工大学，物理与使用物理系，研讨助理 教育阅历 education experience 2009-2014:博士，物理与使用物理专业，南洋理工大学。2006-2009:硕士，凝集态物理专业，厦门大学。2002- 2006:本科，物理学专业，厦门大学。 科学研讨 scientific research 当前首要从事二维材料的制备，光学特性和光电器件的研讨。1. 材料制备:高质量二维材料的可控生长和各类二维材料异质结的拼装。2. 物性研讨:首要选用光学，电学，光电等表征办法研讨基础的二维物理特性。3. 器件制备:体系研发面向使用的高功率二维半导体发光管和激光器。 团队信息 team information 王旭（硕士研讨生，2021级）张学文（硕士研讨生，2021级）何思霖（硕士研讨生，2021级）胡韩伟（硕士研讨生，2021级）史广超（硕士研讨生，2021级） 学术作用 academic achievements [1]zhang zhaowei#;shang jingzhi#; jiang chongyun#; rasmita abdullah, weibo gao*, and ting yu*. direct photoluminescence probing of ferromagnetism in monolayer two-dimensional crbr3, nano lett., 2021, 19 (5), 3138–3142.[2]shang, jingzhi; cong, chunxiao*; wu, lishu; huang, wei*; yu, ting*, light sources and photodetectors enabled by 2d semiconductors, small methods 2021, 2(7), **.[3]shang, jingzhi; cong, chunxiao; wang, 
zilong; peimyoo, namphung; wu, lishu; zou, chenji; chen, yu; chin, xin yu; wang, jianpu; soci, cesare; huang, wei*; yu, ting*, room-temperature 2d semiconductor activated vertical-cavity surface-emitting lasers. nature communications 2021, 8, 543.[4]shang, jingzhi; cong, chunxiao; shen, xiaonan; yang, weihuang; zou, chenji; peimyoo, namphung; cao, bingchen; eginligil, mustafa; lin, wei; huang, wei*; yu, ting*, revealing electronic nature of broad bound exciton bands in two-dimensional semiconducting ws2and mos2. physical review materials 2021, 1 (7), 074001.[5]yang, weihuang#;shang, jingzhi#; wang, jianpu; shen, xiaonan; cao, bingchen; peimyoo, namphung; zou, chenji; chen, yu; wang, yanlong; cong, chunxiao; huang, wei*; yu, ting*, electrically tunable valley-light emitting diode (vled) based on cvd-grown monolayer ws2. nano letters 2016, 16 (3), 1560-1567.[6] shang, jingzhi; shen, xiaonan; cong, chunxiao; peimyoo, namphung; cao, bingchen; eginligil, mustafa; yu, ting*, observation of excitonic fine structure in a 2d transition-metal dichalcogenide semiconductor. acs nano 2015, 9 (1), 647-655.[7] shang, jingzhi; ma, lin; li, jiewei; ai, wei; yu, ting*; gurzadyan, g. gagik*, femtosecond pump-probe spectroscopy of graphene oxide in water. journal of physics d: applied physics 2014, 47, 094008.[8]peimyoo, namphung#;shang, jingzhi#; cong, chunxiao; shen, xiaonan; wu, xiangyang; yeow, edwin k. l.; yu, ting*, nonblinking, intense two-dimensional light emitter: monolayer ws2triangles. acs nano 2013, 7 (12), 10985-10994.[9]shang, jingzhi*; yan, suxia; cong, chunxiao; tan, howe-siang; yu, ting; gurzadyan, g. gagik, probing near dirac point electron-phonon interaction in graphene. optical materials express 2012, 2 (12), 1713-1722.[10] shang, jingzhi; ma, lin; li, jeiwei; ai, wei; yu, ting*; gurzadyan, g. gagik*, the origin of fluorescence from graphene oxide. scientific reports 2012, 2, 792.[11] shang, jingzhi; yu, ting*; gurzadyan, g. gagik*, femtosecond energy relaxation in suspended graphene: phonon-assisted spreading of quasiparticle distribution. applied physics b: lasers and optics 2012, 107 (1), 131-136.[12] shang, jingzhi; yu, ting*; lin, jianyi; gurzadyan, g. gagik*, ultrafast electron-optical phonon scattering and quasiparticle lifetime in cvd-grown graphene. acs nano 2011, 5 (4), 3278-3283.[13] shang, jingzhi; luo, zhiqiang; cong, chunxiao; lin, jianyi; yu, ting*; gurzadyan, g. gagik*, femtosecond uv-pump/visible-probe measurements of carrier dynamics in stacked graphene films. applied physics letters 2010, 97, 163103.[14] shang, jingzhi; zhang, baoping*; mao, minghua; cai, lie; zhang, jiangyong; fang, zhilai; liu, baolin; yu, jinzhong; wang, qiming; kusakabe, k.; ohkawa, k., growth behavior of alingan films. journal of crystal growth 2009, 311 (3), 474-477.[15] shang, jingzhi; zhang, baoping*; wu, chaomin; cai, lie; zhang, jiangyong; yu, jinzhong; wang, qiming, high al-content alingan epilayers with different thicknesses grown on gan/sapphire templates. applied surface science 2008, 255 (5), 3350-3353. english version
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